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| process CPQ150 triac 16 amp, 600 volt triac chip princip al device types cq220-16b series process glass passivated mesa die size 150 mils x 150 mils die thickness 8.6 mils 0.6 mils mt1 bonding pad area 68.9 mils x 118 mils gate bonding pad area 39.4 mils x 39.4 mils top side metalization al - 45,000? back side metalization al/mo/ni/ag - 32,000? process details geometry backside mt2 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r0 (13-february 2003) gross die per 4 inch w afer 466 central semiconductor corp. tm
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